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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D071
BCV61 NPN general purpose double transistor
Product specification Supersedes data of 1997 Jun 16 1999 Apr 08
Philips Semiconductors
Product specification
NPN general purpose double transistor
FEATURES * Low current (max. 100 mA) * Low voltage (max. 30 V) * Matched pairs. APPLICATIONS * For use in applications where the working point must be independent of temperature * Current mirrors.
handbook, halfpage 4
BCV61
PINNING PIN 1 2 3 4 collector TR1 emitter TR1 emitter TR2 DESCRIPTION collector TR2; base TR1 and TR2
3
2
1
DESCRIPTION NPN double transistor in a SOT143B plastic package. PNP complement: BCV62. MARKING TYPE NUMBER BCV61 BCV61A MARKING CODE 1Mp 1Jp TYPE NUMBER BCV61B BCV61C MARKING CODE 1Kp 1Lp
Top view 1 2
MAM293
TR1
TR2
3
4
Fig.1 Simplified outline (SOT143B) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBS IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage TR1 collector-emitter voltage TR1 emitter-base voltage collector current (DC) peak collector current peak base current TR1 total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; note 1 CONDITIONS open emitter open base VCE = 0 - - - - - - - -65 - -65 MIN. MAX. 30 30 6 100 200 200 250 +150 150 +150 V V V mA mA mA mW C C C UNIT
1999 Apr 08
2
Philips Semiconductors
Product specification
NPN general purpose double transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL Transistor TR1 ICBO IEBO hFE VCEsat VBEsat VBE Cc fT F collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage base-emitter saturation voltage base-emitter voltage collector capacitance transition frequency noise figure IE = 0; VCB = 30 V IE = 0; VCB = 30 V; Tj = 150 C IC = 0; VEB = 5 V IC = 100 A; VCE = 5 V IC = 2 mA; VCE = 5 V IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA IC = 10 mA; IB = 0.5 mA; note 1 IC = 100 mA; IB = 5 mA; note 1 IC = 2 mA; VCE = 5 V; note 2 IC = 10 mA; VCE = 5 V; note 2 IE = ie = 0; VCB = 10 V; f = 1 MHz IC = 10 mA; VCE = 5 V; f = 100 MHz IC = 200 A; VCE = 5 V; RS = 2 k; f = 1 kHz; B = 200 Hz - - - 100 110 - - - - 580 - - 100 - - - - - - 90 200 700 900 660 - 2.5 - - 15 5 PARAMETER CONDITIONS MIN. TYP. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 500
BCV61
UNIT K/W
MAX.
UNIT
nA A nA
100 - 800 250 600 - - 700 770 - - 10
mV mV mV mV mV mV pF MHz dB
Transistor TR2 VEBS hFE base-emitter forward voltage VCB = 0; IE = -250 mA VCB = 0; IE = -10 A DC current gain BCV61A BCV61B BCV61C IC = 2 mA; VCE = 5 V 110 200 420 - - - 220 450 800 - -400 - - -1.8 - V mV
1999 Apr 08
3
Philips Semiconductors
Product specification
NPN general purpose double transistor
BCV61
SYMBOL
PARAMETER
CONDITIONS IE2 = -0.5 mA; VCE1 = 5 V; Tamb 25 C IE2 = -0.5 mA; VCE1 = 5 V; Tamb 150 C
MIN.
TYP. - - -
MAX.
UNIT
Transistors TR1 and TR2 I C1 -----I E2 current matching of transistors TR1 and TR2 0.7 0.7 - 1.3 1.3 -5 mA
IE2 Notes
emitter current for thermal stability of IC1
VCE1 = 5 V; note 3; (see Fig.2)
1. Decreasing 1.7 mV/C with increasing temperature. 2. Decreasing 2 mV/C with increasing temperature. 3. Device, without emitter resistors, mounted on an FR4 printed-circuit board.
handbook, halfpage
handbook, halfpage
A IC1 2 TR1 3 VCO 4 VCO 1 TR2 IE2 = constant VCE1
A IC1 2 TR1 3 RE 4 RE
MBK079
1 TR2 IE2 = constant
VCE1
MBK078
VCE1 = 5 V; device, without emitter resistors, mounted on an FR4 printed-circuit board. 2 Voltage drop at contacts: V CO < -- U T = 16 mV -^ 3
Fig.2 Test circuit current matching.
Fig.3 BCV61 with emitter resistors.
1999 Apr 08
4
Philips Semiconductors
Product specification
NPN general purpose double transistor
BCV61
handbook, full pagewidth
30
MBK082
VCE1max (V)
IE2 = 1 mA
20
5 mA
10 50 mA
10 mA
0 10-1
1
10
RE ()
102
I C1 ------- = 1.3 (see Fig.3). I E2
Fig.4 Maximum collector-emitter voltage as a function of emitter resistance.
1999 Apr 08
5
Philips Semiconductors
Product specification
NPN general purpose double transistor
PACKAGE OUTLINE Plastic surface mounted package; 4 leads
BCV61
SOT143B
D
B
E
A
X
y vMA HE
e bp wM B
4
3
Q
A
A1 c
1
b1 e1
2
Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max 0.1 bp 0.48 0.38 b1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 1.7 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 y 0.1
OUTLINE VERSION SOT143B
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1999 Apr 08
6
Philips Semiconductors
Product specification
NPN general purpose double transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BCV61
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 Apr 08
7
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA63
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
115002/00/03/pp8
Date of release: 1999 Apr 08
Document order number:
9397 750 05554

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